Infineon IMBG65 Type N-Channel MOSFET, 170 A, 650 V Enhancement, 7-Pin PG-TO263-7 IMBG65R009M1HXTMA1
- RS Stock No.:
- 351-987
- Mfr. Part No.:
- IMBG65R009M1HXTMA1
- Manufacturer:
- Infineon
Bulk discount available
Subtotal (1 unit)*
PHP3,089.59
(exc. VAT)
PHP3,460.34
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Last RS stock
- Final 1,000 unit(s), ready to ship from another location
Units | Per Unit |
|---|---|
| 1 - 9 | PHP3,089.59 |
| 10 - 99 | PHP2,780.63 |
| 100 + | PHP2,564.19 |
*price indicative
- RS Stock No.:
- 351-987
- Mfr. Part No.:
- IMBG65R009M1HXTMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 170A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Output Power | 555W | |
| Series | IMBG65 | |
| Package Type | PG-TO263-7 | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | JEDEC | |
| Width | 9.45 mm | |
| Length | 10.2mm | |
| Height | 4.5mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 170A | ||
Maximum Drain Source Voltage Vds 650V | ||
Output Power 555W | ||
Series IMBG65 | ||
Package Type PG-TO263-7 | ||
Mount Type Surface | ||
Pin Count 7 | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals JEDEC | ||
Width 9.45 mm | ||
Length 10.2mm | ||
Height 4.5mm | ||
Automotive Standard No | ||
The Infineon CoolSiC is built over the solid silicon carbide technology. Leveraging the wide bandgap SiC material characteristics, it offers a unique combination of performance, reliability and ease of use. Suitable for high temperature and harsh operations, it enables the simplified and cost effective deployment of the highest system efficiency.
Optimized switching behaviour at higher currents
Commutation robust fast body diode with low Qfr
Superior gate oxide reliability
Increased avalanche capability
Compatible with standard drivers
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