Infineon IMBG65 Type N-Channel MOSFET, 58 A, 650 V Enhancement, 7-Pin PG-TO263-7 IMBG65R033M2H
- RS Stock No.:
- 351-961
- Mfr. Part No.:
- IMBG65R033M2H
- Manufacturer:
- Infineon
Bulk discount available
View bulk pricing optionsSubtotal (1 unit)*
PHP871.72
(exc. VAT)
PHP976.33
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- 1,000 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit |
|---|---|
| 1 - 9 | PHP871.72 |
| 10 - 99 | PHP784.36 |
| 100 - 499 | PHP723.88 |
| 500 - 999 | PHP671.07 |
| 1000 + | PHP601.95 |
*price indicative
- RS Stock No.:
- 351-961
- Mfr. Part No.:
- IMBG65R033M2H
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 58A | |
| Output Power | 227W | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | IMBG65 | |
| Package Type | PG-TO263-7 | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Height | 4.5mm | |
| Length | 10.2mm | |
| Standards/Approvals | JEDEC | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 58A | ||
Output Power 227W | ||
Maximum Drain Source Voltage Vds 650V | ||
Series IMBG65 | ||
Package Type PG-TO263-7 | ||
Mount Type Surface | ||
Pin Count 7 | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Height 4.5mm | ||
Length 10.2mm | ||
Standards/Approvals JEDEC | ||
Automotive Standard No | ||
The Infineon CoolSiC MOSFET G2 in a D2PAK-7 package builds on the strengths of Generation 1 technology and enables the accelerated system design of more cost optimized, efficient, compact, and reliable solutions. Generation 2 comes with significant improvements in key figures-of-merit for both, hard-switching operation and soft-switching topologies, suitable for all common combinations of AC-DC, DC-DC, and DC-AC stages.
Enables BOM savings
Highest reliability
Enables top efficiency and power density
Ease of use
Full compatibility with existing vendors
Allows designs without fan or heatsink
Related links
- Infineon IMBG65 Type N-Channel MOSFET 650 V Enhancement, 7-Pin PG-TO263-7 IMBG65R026M2H
- Infineon IMBG65 Type N-Channel MOSFET 650 V Enhancement, 7-Pin PG-TO263-7 IMBG65R010M2H
- Infineon IMBG65 Type N-Channel MOSFET 650 V Enhancement, 7-Pin PG-TO263-7 IMBG65R060M2H
- Infineon IMBG65 Type N-Channel MOSFET 650 V Enhancement, 7-Pin PG-TO263-7 IMBG65R009M1HXTMA1
- Infineon AIK 1 Type N-Channel MOSFET 7-Pin PG-TO263-7 AIKBE50N65RF5ATMA1
- Infineon CoolSiC Type N-Channel MOSFET 650 V Enhancement, 7-Pin PG-TO263-7 IMBG65R050M2HXTMA1
- Infineon CoolSiC Type N-Channel MOSFET 650 V Enhancement, 7-Pin PG-TO263-7 IMBG65R007M2HXTMA1
- Infineon CoolSiC Type N-Channel MOSFET 650 V Enhancement, 7-Pin PG-TO263-7 IMBG65R020M2HXTMA1