Infineon CoolSiC Type N-Channel MOSFET, 238 A, 650 V Enhancement, 7-Pin PG-TO263-7 IMBG65R007M2HXTMA1

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PHP3,073.09

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PHP3,441.86

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RS Stock No.:
349-322
Mfr. Part No.:
IMBG65R007M2HXTMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

238A

Maximum Drain Source Voltage Vds

650V

Package Type

PG-TO263-7

Series

CoolSiC

Mount Type

Surface

Pin Count

7

Maximum Drain Source Resistance Rds

8.5mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

179nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

789W

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

No

COO (Country of Origin):
MY

Infineon CoolSiC Series MOSFET, 650V Maximum Drain Source Voltage, 238A Maximum Continuous Drain Current - IMBG65R007M2HXTMA1


This MOSFET is a silicon carbide, N-channel enhancement device designed for high-voltage switching and power conversion tasks. It operates across a wide ambient range, making it suitable for demanding thermal environments, and is supplied in a surface-mount power package for integration into compact assemblies.

Features and Benefits:


• 650V drain rating enables high-voltage switching applications
• 8.5mΩ Rds(on) delivers low conduction losses for efficiency
• 238A continuous drain current supports heavy current loads
• 789W maximum power dissipation handles significant thermal stress
• 179nC typical gate charge permits predictable gate-drive requirements
• PG-TO263-7 surface-mount package eases PCB assembly for mass production

Applications


• Suitable for inverters in industrial power systems
• Ideal for high-power motor drives and traction converters
• Used with renewable-energy converters and power optimisers
• Can be used for high-voltage DC-DC conversion stages
• Employed in uninterruptible power supplies and grid-tied systems

What thermal range can it tolerate in harsh installations?


It is rated to function from -55°C up to 175°C, allowing operation in extreme temperature environments.

What gate-drive constraints should be observed for safe operation?


Gate-to-source voltage must not exceed 23V to avoid stressing the gate structure.

How many pins does the package present for PCB layout considerations?


The component uses a seven-pin configuration that suits standard surface-mount placement.

Is this device suitable for automotive-specific certification requirements?


It is not classified under automotive-grade standards but is RoHS compliant.

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