Infineon CoolSiC Type N-Channel MOSFET, 49 A, 650 V Enhancement, 7-Pin PG-TO263-7 IMBG65R040M2HXTMA1
- RS Stock No.:
- 349-326
- Mfr. Part No.:
- IMBG65R040M2HXTMA1
- Manufacturer:
- Infineon
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PHP681.63
(exc. VAT)
PHP763.43
(inc. VAT)
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- 1,000 unit(s) ready to ship from another location
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Units | Per Unit |
|---|---|
| 1 - 9 | PHP681.63 |
| 10 - 99 | PHP613.55 |
| 100 - 499 | PHP565.55 |
| 500 - 999 | PHP524.53 |
| 1000 + | PHP470.42 |
*price indicative
- RS Stock No.:
- 349-326
- Mfr. Part No.:
- IMBG65R040M2HXTMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 49A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | PG-TO263-7 | |
| Series | CoolSiC | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 49mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 23 V | |
| Typical Gate Charge Qg @ Vgs | 28nC | |
| Maximum Power Dissipation Pd | 197W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 49A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type PG-TO263-7 | ||
Series CoolSiC | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 49mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 23 V | ||
Typical Gate Charge Qg @ Vgs 28nC | ||
Maximum Power Dissipation Pd 197W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
The Infineon 650 V CoolSiC MOSFET G2 is built on Infineon’s robust 2nd generation Silicon Carbide trench technology, offering unparalleled performance, superior reliability, and exceptional ease of use. This MOSFET enables cost effective, highly efficient, and simplified designs, meeting the ever-growing needs of modern power systems and markets. It is ideal for applications where high efficiency and robust performance are required, providing a reliable solution for a wide range of power electronics.
Ultra low switching losses
Robust against parasitic turn on even with 0 V turn off gate voltage
Flexible driving voltage and compatible with bipolar driving scheme
Robust body diode operation under hard commutation events
The .XT interconnection technology for best in class thermal performance
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