Infineon AIK 1 Type N-Channel MOSFET, 650 V Enhancement, 7-Pin PG-TO263-7 AIKBE50N65RF5ATMA1

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PHP691.23

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PHP774.18

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100 - 499PHP573.41
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RS Stock No.:
349-189
Mfr. Part No.:
AIKBE50N65RF5ATMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Drain Source Voltage Vds

650V

Package Type

PG-TO263-7

Series

AIK

Mount Type

Surface

Pin Count

7

Channel Mode

Enhancement

Maximum Power Dissipation Pd

326W

Typical Gate Charge Qg @ Vgs

108nC

Forward Voltage Vf

1.8V

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Number of Elements per Chip

1

Automotive Standard

No

COO (Country of Origin):
MY
The Infineon CoolSiC Hybrid Discrete with TRENCHSTOP 5 Fast Switching IGBT and CoolSiC schottky diode G5 is designed for automotive. It has best in class efficiency in hard switching and resonant topologies.

650 V breakdown voltage

CoolSiCTM Schottky diode G5

Low gate charge QG

Kelvin emitter connection for optimized switching performance

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