Infineon IMZC120 Type N-Channel MOSFET, 34 A, 1200 V Enhancement, 4-Pin PG-TO-247-4-U07 IMZC120R040M2HXKSA1

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RS Stock No.:
351-930
Mfr. Part No.:
IMZC120R040M2HXKSA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

34A

Maximum Drain Source Voltage Vds

1200V

Series

IMZC120

Package Type

PG-TO-247-4-U07

Mount Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance Rds

40mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

39nC

Maximum Power Dissipation Pd

218W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

JEDEC47/20/22

Automotive Standard

No

Infineon IMZC120 Series MOSFET, 218W Maximum Power Dissipation, 1200V Maximum Drain Source Voltage - IMZC120R040M2HXKSA1


This n-channel enhancement-mode MOSFET is a high-voltage switching transistor designed for demanding power-conversion environments. It is intended for through-hole mounting in equipment that requires robust drain-to-source blocking capability and substantial continuous current handling, operating across a wide thermal range suitable for harsh conditions.

Features and Benefits:


• 1200V drain-source rating enables high-voltage designs
• 34A continuous drain current supports heavy-load operation
• 40mΩ low Rds(on) reduces conduction losses
• 218W power dissipation for high-power switching
• 39nC typical gate charge allows controlled switching energy
• Through-hole PG-TO-247-4 package simplifies prototype assembly

Applications


• Suitable for high-voltage power supplies and converters
• Used with motor drives requiring large current capacity
• Ideal for industrial inverter and switch-mode tasks
• Can be used for battery-charging systems in heavy equipment
• Used for laboratory power-electronics testing and development

What ambient extremes can this device tolerate during operation?


It is specified to operate from -55°C up to 175°C, allowing use in environments with severe temperature variation.

What package and mounting style does it require on a PCB?


The device is supplied in a PG-TO-247-4 through-hole package intended for bolted or soldered mounting with appropriate heatsinking.

How does the gate drive requirement affect switching design?


With a typical gate charge of 39nC at rated Vgs, designers should size gate drivers and gate resistances to balance switching speed and EMI while considering drive current.

What electrical limits must be observed to prevent device damage?


Maximum gate-source voltage is 25V and drain-source voltage is 1200V

these absolute values must not be exceeded during operation.

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