Infineon IMZC120 Type N-Channel MOSFET, 55 A, 1200 V Enhancement, 4-Pin PG-TO-247-4-U07 IMZC120R034M2HXKSA1
- RS Stock No.:
- 351-928
- Mfr. Part No.:
- IMZC120R034M2HXKSA1
- Manufacturer:
- Infineon
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- RS Stock No.:
- 351-928
- Mfr. Part No.:
- IMZC120R034M2HXKSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 55A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | PG-TO-247-4-U07 | |
| Series | IMZC120 | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 89mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 45nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 244W | |
| Maximum Operating Temperature | 200°C | |
| Standards/Approvals | JEDEC47/20/22 | |
| Length | 23.1mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 55A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type PG-TO-247-4-U07 | ||
Series IMZC120 | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 89mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 45nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 244W | ||
Maximum Operating Temperature 200°C | ||
Standards/Approvals JEDEC47/20/22 | ||
Length 23.1mm | ||
Automotive Standard No | ||
Infineon IMZC120 Series MOSFET, 244W Maximum Power Dissipation, 1200V Maximum Drain Source Voltage - IMZC120R034M2HXKSA1
This MOSFET is a high-voltage switching transistor intended for power conversion and control in demanding industrial environments. It is an enhancement-mode N-channel device designed to handle elevated drain-source voltages and substantial continuous current, making it suitable for roles where robust high-voltage switching and thermal endurance are required.
Features and Benefits:
• 1200V Vds enables high-voltage system utilisation
• 55A continuous drain current supports heavy-load switching
• 89mΩ Rds(on) lowers conduction losses during operation
• 244W power dissipation allows sustained thermal throughput
• 45nC typical gate charge improves switching speed control
• 55A continuous drain current supports heavy-load switching
• 89mΩ Rds(on) lowers conduction losses during operation
• 244W power dissipation allows sustained thermal throughput
• 45nC typical gate charge improves switching speed control
Applications
• Suitable for high-voltage inverter stages in industrial drives
• Ideal for power supplies requiring high-voltage switching
• Used with large motor controllers demanding high current handling
• Can be used for hard-switching topologies in converters
• Ideal for power supplies requiring high-voltage switching
• Used with large motor controllers demanding high current handling
• Can be used for hard-switching topologies in converters
What package and mounting style does it use for assembly?
It is supplied in a PG-TO-247-4-U07 package configured for through-hole mounting to facilitate secure board attachment and robust thermal connection to heatsinks.
What temperature range can it tolerate during operation?
It operates across a wide span from -55°C up to 200°C, permitting use in extreme thermal conditions and elevated junction temperatures.
How many pins are present and what does this imply electrically?
The device has four pins, accommodating gate, drain and dual-source or tab arrangements typical of power MOSFET packages for flexible circuit integration.
Which industry standard tests apply to its qualification?
It conforms to JEDEC47/20/22 standards, indicating compliance with established thermal and mechanical reliability test protocols.
Related links
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