Infineon IMZC120 Type N-Channel MOSFET, 55 A, 1200 V Enhancement, 4-Pin PG-TO-247-4-U07 IMZC120R034M2HXKSA1

Bulk discount available

Subtotal (1 unit)*

PHP1,049.94

(exc. VAT)

PHP1,175.93

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 240 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per Unit
1 - 9PHP1,049.94
10 - 99PHP945.21
100 +PHP871.02

*price indicative

RS Stock No.:
351-928
Mfr. Part No.:
IMZC120R034M2HXKSA1
Manufacturer:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

55A

Maximum Drain Source Voltage Vds

1200V

Package Type

PG-TO-247-4-U07

Series

IMZC120

Mount Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance Rds

89mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

244W

Typical Gate Charge Qg @ Vgs

45nC

Maximum Gate Source Voltage Vgs

25 V

Maximum Operating Temperature

200°C

Standards/Approvals

JEDEC47/20/22

Length

23.1mm

Width

15.6 mm

Automotive Standard

No

The Infineon CoolSiC MOSFET discrete with high creepage package builds on the strengths of Generation 1 technology with significant improvement that provides an advanced solution for more cost-optimized, efficient, compact, easy-to-design and reliable system. It enhanced better performance in both hard-switching operation and soft-switching topologies for all common combinations of AC-DC, DC-DC, and DC-AC stages.

Better energy efficiency

Cooling optimization

Higher power density

New robustness features

Highly reliable

Easy paralleling

Related links