Infineon OptiMOS Type N-Channel MOSFET, 99 A, 80 V Enhancement, 9-Pin PG-WHTFN-9 IQE050N08NM5CGSCATMA1

RS Stock No.:: 284-771
Mfr. Part No.:: IQE050N08NM5CGSCATMA1
Manufacturer:: Infineon

Infineon OptiMOS Type N-Channel MOSFET, 99 A, 80 V Enhancement, 9-Pin PG-WHTFN-9 IQE050N08NM5CGSCATMA1

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Bulk discount available

Subtotal (1 pack of 5 units)*

PHP1,008.90

(exc. VAT)

PHP1,129.95

(inc. VAT)

FREE delivery for orders over ₱3,000.00

In Stock

100 unit(s) ready to ship from another location

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Units	Per Unit	Per Pack*
5 - 45	PHP201.78	PHP1,008.90
50 - 95	PHP191.662	PHP958.31
100 - 495	PHP177.616	PHP888.08
500 - 995	PHP163.366	PHP816.83
1000 +	PHP157.378	PHP786.89

*price indicative

RS Stock No.:: 284-771
Mfr. Part No.:: IQE050N08NM5CGSCATMA1
Manufacturer:: Infineon

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	99A
	Maximum Drain Source Voltage Vds	80V
	Package Type	PG-WHTFN-9
	Series	OptiMOS
	Mount Type	Surface
	Pin Count	9
	Maximum Drain Source Resistance Rds	5.0mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	±20 V
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	100W
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS Compliant
	Automotive Standard	No

	Select all
	Brand Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 99A
	Maximum Drain Source Voltage Vds 80V
	Package Type PG-WHTFN-9
	Series OptiMOS
	Mount Type Surface
	Pin Count 9
	Maximum Drain Source Resistance Rds 5.0mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs ±20 V
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 100W
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS Compliant
	Automotive Standard No

Datasheet - IQE050N08NM5CGSCATMA1

The Infineon MOSFET features an power transistor is an exemplary choice for applications requiring high efficiency and reliability. Optimised for synchronous rectification, this N channel device is part of the OptiMOS 5 series, renowned for its robust thermal performance and low on resistance. The device operates effectively at voltages of up to 80V, making it suitable for a wide range of industrial applications. With features such as 100% avalanche testing and a Pb free design compliant with RoHS standards, this product embodies both safety and sustainability in its manufacturing process. Its small footprint and high performance manifest in the Advanced design that ensures superior thermal characteristics, presenting an excellent option for designers aiming to improve overall system efficiency.

Optimised for synchronous rectification

N channel for easy circuit integration

Low on resistance reduces power losses

Robust thermal resistance for reliability

Avalanche tested for extreme conditions

Pb free lead plating for safety

Halogen free construction meets IEC standards

Qualified per JEDEC industry standards

Infineon OptiMOS Type N-Channel MOSFET, 99 A, 80 V Enhancement, 9-Pin PG-WHTFN-9 IQE050N08NM5CGSCATMA1

FREE delivery for orders over ₱3,000.00

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