STMicroelectronics STGW80V60DF IGBT, 120 A 600 V, 3-Pin TO-247, Through Hole

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Subtotal (1 tube of 30 units)*

PHP10,543.92

(exc. VAT)

PHP11,809.20

(inc. VAT)

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Units
Per Unit
Per Tube*
30 - 30PHP351.464PHP10,543.92
60 - 90PHP348.018PHP10,440.54
120 - 270PHP328.003PHP9,840.09
300 - 570PHP310.396PHP9,311.88
600 +PHP304.009PHP9,120.27

*price indicative

RS Stock No.:
920-6320
Mfr. Part No.:
STGW80V60DF
Manufacturer:
STMicroelectronics
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Brand

STMicroelectronics

Maximum Continuous Collector Current

120 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

469 W

Package Type

TO-247

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Transistor Configuration

Single

Dimensions

15.75 x 5.15 x 20.15mm

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-40 °C

IGBT Discretes, STMicroelectronics


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IGBT Discretes & Modules, STMicroelectronics


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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