STMicroelectronics STGW60V60F IGBT, 60 A 600 V, 3-Pin TO-247, Through Hole

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Subtotal (1 pack of 5 units)*

PHP1,405.32

(exc. VAT)

PHP1,573.96

(inc. VAT)

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Units
Per Unit
Per Pack*
5 - 20PHP281.064PHP1,405.32
25 - 45PHP275.444PHP1,377.22
50 - 245PHP269.936PHP1,349.68
250 - 495PHP264.538PHP1,322.69
500 +PHP259.248PHP1,296.24

*price indicative

Packaging Options:
RS Stock No.:
791-7655
Mfr. Part No.:
STGW60V60F
Manufacturer:
STMicroelectronics
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Brand

STMicroelectronics

Maximum Continuous Collector Current

60 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

375 W

Package Type

TO-247

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Switching Speed

1MHz

Transistor Configuration

Single

Dimensions

15.75 x 5.15 x 20.15mm

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-55 °C

IGBT Discretes, STMicroelectronics


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IGBT Discretes & Modules, STMicroelectronics


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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