Infineon IKW50N60TFKSA1 IGBT, 100 A 600 V, 3-Pin TO-247, Through Hole

RS Stock No.:: 911-4798
Mfr. Part No.:: IKW50N60TFKSA1
Manufacturer:: Infineon

Infineon IKW50N60TFKSA1 IGBT, 100 A 600 V, 3-Pin TO-247, Through Hole

This image is representative of the product range

Bulk discount available

Subtotal (1 tube of 30 units)*

PHP7,938.00

(exc. VAT)

PHP8,890.50

(inc. VAT)

FREE delivery for orders over ₱3,000.00

In Stock

360 unit(s) ready to ship from another location

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Units	Per Unit	Per Tube*
30 - 30	PHP264.60	PHP7,938.00
60 - 90	PHP256.662	PHP7,699.86
120 +	PHP248.962	PHP7,468.86

*price indicative

RS Stock No.:: 911-4798
Mfr. Part No.:: IKW50N60TFKSA1
Manufacturer:: Infineon

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Maximum Continuous Collector Current	100 A
	Maximum Collector Emitter Voltage	600 V
	Maximum Gate Emitter Voltage	±20V
	Maximum Power Dissipation	333 W
	Package Type	TO-247
	Mounting Type	Through Hole
	Pin Count	3
	Dimensions	16.03 x 21.1 x 5.16mm
	Minimum Operating Temperature	-40 °C
	Maximum Operating Temperature	+175 °C

	Select all
	Brand Infineon
	Maximum Continuous Collector Current 100 A
	Maximum Collector Emitter Voltage 600 V
	Maximum Gate Emitter Voltage ±20V
	Maximum Power Dissipation 333 W
	Package Type TO-247
	Mounting Type Through Hole
	Pin Count 3
	Dimensions 16.03 x 21.1 x 5.16mm
	Minimum Operating Temperature -40 °C
	Maximum Operating Temperature +175 °C

COO (Country of Origin):: DE

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A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.

• Collector-emitter voltage range 600 to 650V
• Very low VCEsat
• Low turn-off losses
• Short tail current
• Low EMI
• Maximum junction temperature 175°C

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.

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The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Infineon IKW50N60TFKSA1 IGBT, 100 A 600 V, 3-Pin TO-247, Through Hole

FREE delivery for orders over ₱3,000.00

Infineon TrenchStop IGBT Transistors, 600 and 650V

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.

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