onsemi FGH60N60SMD IGBT, 120 A 600 V, 3-Pin TO-247AB, Through Hole

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Subtotal (1 tube of 30 units)*

PHP6,600.99

(exc. VAT)

PHP7,393.11

(inc. VAT)

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  • 450 unit(s) ready to ship from another location
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Units
Per Unit
Per Tube*
30 - 30PHP220.033PHP6,600.99
60 - 120PHP215.632PHP6,468.96
150 - 270PHP211.319PHP6,339.57
300 - 570PHP207.093PHP6,212.79
600 +PHP202.951PHP6,088.53

*price indicative

RS Stock No.:
124-1320
Mfr. Part No.:
FGH60N60SMD
Manufacturer:
onsemi
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Brand

onsemi

Maximum Continuous Collector Current

120 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

600 W

Package Type

TO-247AB

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Transistor Configuration

Single

Dimensions

15.6 x 4.7 x 20.6mm

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-55 °C

Discrete IGBTs, Fairchild Semiconductor


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IGBT Discretes & Modules, Fairchild Semiconductor


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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