Toshiba GT40WR21,Q(O IGBT, 40 A 1800 V, 3-Pin TO-3P, Through Hole
- RS Stock No.:
- 891-2746P
- Mfr. Part No.:
- GT40WR21,Q(O
- Manufacturer:
- Toshiba
This image is representative of the product range
Bulk discount available
Subtotal 20 units (supplied in a bag)*
PHP5,075.20
(exc. VAT)
PHP5,684.20
(inc. VAT)
Stock information currently inaccessible
Units | Per Unit |
|---|---|
| 20 - 49 | PHP253.76 |
| 50 - 99 | PHP239.76 |
| 100 - 249 | PHP237.70 |
| 250 + | PHP236.06 |
*price indicative
- RS Stock No.:
- 891-2746P
- Mfr. Part No.:
- GT40WR21,Q(O
- Manufacturer:
- Toshiba
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Maximum Continuous Collector Current | 40 A | |
| Maximum Collector Emitter Voltage | 1800 V | |
| Maximum Gate Emitter Voltage | ±25V | |
| Maximum Power Dissipation | 375 W | |
| Package Type | TO-3P | |
| Mounting Type | Through Hole | |
| Channel Type | N | |
| Pin Count | 3 | |
| Switching Speed | 1.8MHz | |
| Transistor Configuration | Single | |
| Dimensions | 15.5 x 4.5 x 20mm | |
| Gate Capacitance | 4500pF | |
| Maximum Operating Temperature | 175 °C | |
| Select all | ||
|---|---|---|
Brand Toshiba | ||
Maximum Continuous Collector Current 40 A | ||
Maximum Collector Emitter Voltage 1800 V | ||
Maximum Gate Emitter Voltage ±25V | ||
Maximum Power Dissipation 375 W | ||
Package Type TO-3P | ||
Mounting Type Through Hole | ||
Channel Type N | ||
Pin Count 3 | ||
Switching Speed 1.8MHz | ||
Transistor Configuration Single | ||
Dimensions 15.5 x 4.5 x 20mm | ||
Gate Capacitance 4500pF | ||
Maximum Operating Temperature 175 °C | ||
- COO (Country of Origin):
- JP
IGBT Discretes, Toshiba
IGBT Discretes & Modules, Toshiba
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.