Toshiba GT40WR21,Q(O IGBT, 40 A 1800 V, 3-Pin TO-3P, Through Hole

RS Stock No.:: 891-2746P
Mfr. Part No.:: GT40WR21,Q(O
Manufacturer:: Toshiba

Toshiba GT40WR21,Q(O IGBT, 40 A 1800 V, 3-Pin TO-3P, Through Hole

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Units	Per Unit
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50 - 99	PHP239.76
100 - 249	PHP237.70
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RS Stock No.:: 891-2746P
Mfr. Part No.:: GT40WR21,Q(O
Manufacturer:: Toshiba

GT40WR21, Silicon N-Channel IGBT
ESD Control Selection Guide V1

Attribute	Value
Maximum Continuous Collector Current	40 A
Maximum Collector Emitter Voltage	1800 V
Maximum Gate Emitter Voltage	±25V
Maximum Power Dissipation	375 W
Package Type	TO-3P
Mounting Type	Through Hole
Channel Type	N
Pin Count	3
Switching Speed	1.8MHz
Transistor Configuration	Single
Dimensions	15.5 x 4.5 x 20mm
Maximum Operating Temperature	175 °C
Gate Capacitance	4500pF

Toshiba GT40WR21,Q(O IGBT, 40 A 1800 V, 3-Pin TO-3P, Through Hole

FREE delivery for over PHP7,000.00 (ex VAT)

IGBT Discretes, Toshiba