Toshiba GT40QR21,F(O, Type N-Channel Discrete IGBT, 40 A 1200 V, 3-Pin TO-3P, Through Hole

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1 - 19PHP322.55
20 - 49PHP312.87
50 - 99PHP303.49
100 - 249PHP294.39
250 +PHP285.55

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RS Stock No.:
891-2743
Mfr. Part No.:
GT40QR21,F(O
Manufacturer:
Toshiba
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Brand

Toshiba

Product Type

Discrete IGBT

Maximum Continuous Collector Current Ic

40A

Maximum Collector Emitter Voltage Vceo

1200V

Maximum Power Dissipation Pd

230W

Package Type

TO-3P

Mount Type

Through Hole

Channel Type

Type N

Pin Count

3

Switching Speed

2.5MHz

Maximum Collector Emitter Saturation Voltage VceSAT

1.9V

Minimum Operating Temperature

-55°C

Maximum Gate Emitter Voltage VGEO

±25 V

Maximum Operating Temperature

175°C

Series

6.5th generation

Standards/Approvals

RoHS

Energy Rating

0.29mJ

Automotive Standard

No

COO (Country of Origin):
JP

IGBT Discretes, Toshiba


IGBT Discretes & Modules, Toshiba


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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