Toshiba GT40QR21(STA1,E,D IGBT, 40 A 1200 V, 3-Pin SC-65, Through Hole

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PHP280.22

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PHP313.85

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1 - 9PHP280.22
10 - 49PHP271.80
50 - 99PHP263.64
100 - 249PHP257.79
250 +PHP252.19

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RS Stock No.:
756-0540
Mfr. Part No.:
GT40QR21(STA1,E,D
Manufacturer:
Toshiba
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Brand

Toshiba

Maximum Continuous Collector Current

40 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±25V

Maximum Power Dissipation

230 W

Package Type

SC-65

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Switching Speed

0.2µs

Transistor Configuration

Single

Dimensions

20 x 15.5 x 4.5mm

Maximum Operating Temperature

+175 °C

COO (Country of Origin):
JP

IGBT Discretes, Toshiba



IGBT Discretes & Modules, Toshiba


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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