Toshiba GT50JR22 IGBT, 50 A 600 V, 3-Pin TO-3P, Through Hole

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PHP426.65

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PHP477.85

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50 - 99PHP401.43
100 - 249PHP389.38
250 +PHP377.69

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Packaging Options:
RS Stock No.:
796-5064
Mfr. Part No.:
GT50JR22
Manufacturer:
Toshiba
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Brand

Toshiba

Maximum Continuous Collector Current

50 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±25V

Maximum Power Dissipation

230 W

Package Type

TO-3P

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Switching Speed

1MHz

Transistor Configuration

Single

Dimensions

15.5 x 4.5 x 20mm

Maximum Operating Temperature

+175 °C

IGBT Discretes, Toshiba


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IGBT Discretes & Modules, Toshiba


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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