onsemi FGH40T120SMD IGBT, 80 A 1200 V, 3-Pin TO-247, Through Hole

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Subtotal (1 tube of 30 units)*

PHP11,179.05

(exc. VAT)

PHP12,520.53

(inc. VAT)

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Temporarily out of stock
  • 450 unit(s) shipping from April 01, 2026
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Units
Per Unit
Per Tube*
30 - 30PHP372.635PHP11,179.05
60 - 120PHP361.456PHP10,843.68
150 - 270PHP350.613PHP10,518.39
300 - 570PHP340.095PHP10,202.85
600 +PHP329.892PHP9,896.76

*price indicative

RS Stock No.:
124-1446
Mfr. Part No.:
FGH40T120SMD
Manufacturer:
onsemi
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Brand

onsemi

Maximum Continuous Collector Current

80 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±25V

Maximum Power Dissipation

555 W

Package Type

TO-247

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Transistor Configuration

Single

Dimensions

15.87 x 4.82 x 20.82mm

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+175 °C

Discrete IGBTs, 1000V and over, Fairchild Semiconductor


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IGBT Discretes & Modules, Fairchild Semiconductor


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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