Toshiba GT8G151,LQ(O IGBT, 150 A 400 V, 8-Pin TSON, Surface Mount
- RS Stock No.:
- 756-0568P
- Mfr. Part No.:
- GT8G151,LQ(O
- Manufacturer:
- Toshiba
This image is representative of the product range
Bulk discount available
Subtotal 20 units (supplied on a continuous strip)*
PHP667.48
(exc. VAT)
PHP747.58
(inc. VAT)
Stock information currently inaccessible
Units | Per Unit |
|---|---|
| 20 - 90 | PHP33.374 |
| 100 - 190 | PHP28.244 |
| 200 - 390 | PHP26.192 |
| 400 + | PHP25.166 |
*price indicative
- RS Stock No.:
- 756-0568P
- Mfr. Part No.:
- GT8G151,LQ(O
- Manufacturer:
- Toshiba
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Maximum Continuous Collector Current | 150 A | |
| Maximum Collector Emitter Voltage | 400 V | |
| Maximum Gate Emitter Voltage | ±4V | |
| Maximum Power Dissipation | 830 mW | |
| Package Type | TSON | |
| Mounting Type | Surface Mount | |
| Channel Type | N | |
| Pin Count | 8 | |
| Switching Speed | 2.4µs | |
| Transistor Configuration | Single | |
| Dimensions | 3.1 x 3.1 x 0.85mm | |
| Maximum Operating Temperature | +150 °C | |
| Select all | ||
|---|---|---|
Brand Toshiba | ||
Maximum Continuous Collector Current 150 A | ||
Maximum Collector Emitter Voltage 400 V | ||
Maximum Gate Emitter Voltage ±4V | ||
Maximum Power Dissipation 830 mW | ||
Package Type TSON | ||
Mounting Type Surface Mount | ||
Channel Type N | ||
Pin Count 8 | ||
Switching Speed 2.4µs | ||
Transistor Configuration Single | ||
Dimensions 3.1 x 3.1 x 0.85mm | ||
Maximum Operating Temperature +150 °C | ||
IGBT Discretes, Toshiba
IGBT Discretes & Modules, Toshiba
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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