Infineon IGB10N60TATMA1, Type N-Channel IGBT, 20 A 600 V, 3-Pin TO-263, Surface
- RS Stock No.:
- 826-9055
- Mfr. Part No.:
- IGB10N60TATMA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 20 units)*
PHP1,216.38
(exc. VAT)
PHP1,362.34
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Temporarily out of stock
- 560 unit(s) shipping from June 15, 2026
- Plus 1,000 unit(s) shipping from September 03, 2026
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Units | Per Unit | Per Pack* |
|---|---|---|
| 20 - 20 | PHP60.819 | PHP1,216.38 |
| 40 - 80 | PHP58.994 | PHP1,179.88 |
| 100 - 180 | PHP52.097 | PHP1,041.94 |
| 200 - 380 | PHP41.157 | PHP823.14 |
| 400 + | PHP37.496 | PHP749.92 |
*price indicative
- RS Stock No.:
- 826-9055
- Mfr. Part No.:
- IGB10N60TATMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Collector Current Ic | 20A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 600V | |
| Maximum Power Dissipation Pd | 110W | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Switching Speed | 1MHz | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.05V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | JEDEC | |
| Series | TrenchStop | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current Ic 20A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 600V | ||
Maximum Power Dissipation Pd 110W | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Channel Type Type N | ||
Pin Count 3 | ||
Switching Speed 1MHz | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.05V | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals JEDEC | ||
Series TrenchStop | ||
Automotive Standard No | ||
RoHS Status: Not Applicable
Infineon TrenchStop IGBT Transistors, 600 and 650V
A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.
• Collector-emitter voltage range 600 to 650V
• Very low VCEsat
• Low turn-off losses
• Short tail current
• Low EMI
• Maximum junction temperature 175°C
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.