Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Littelfuse
	Maximum Continuous Collector Current	50 A
	Maximum Collector Emitter Voltage	365 V
	Maximum Gate Emitter Voltage	±15V
	Maximum Power Dissipation	165 W
	Package Type	D2PAK (TO-263)
	Mounting Type	Surface Mount
	Channel Type	N
	Pin Count	3
	Transistor Configuration	Single
	Dimensions	10.29 x 9.65 x 4.83mm
	Minimum Operating Temperature	-55 °C
	Maximum Operating Temperature	+175 °C

	Select all
	Brand Littelfuse
	Maximum Continuous Collector Current 50 A
	Maximum Collector Emitter Voltage 365 V
	Maximum Gate Emitter Voltage ±15V
	Maximum Power Dissipation 165 W
	Package Type D2PAK (TO-263)
	Mounting Type Surface Mount
	Channel Type N
	Pin Count 3
	Transistor Configuration Single
	Dimensions 10.29 x 9.65 x 4.83mm
	Minimum Operating Temperature -55 °C
	Maximum Operating Temperature +175 °C

IGBT Discretes, ON Semiconductor

Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.

IGBT Discretes, ON Semiconductor

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Littelfuse NGB8207ABNT4G IGBT, 50 A 365 V, 3-Pin D2PAK (TO-263), Surface Mount

IGBT Discretes, ON Semiconductor

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.

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