Littelfuse NGB8207ABNT4G, N-Channel IGBT, 20 A 365 V, 3-Pin TO-263, Surface
- RS Stock No.:
- 805-1753
- Mfr. Part No.:
- NGB8207ABNT4G
- Manufacturer:
- Littelfuse
This image is representative of the product range
Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 805-1753
- Mfr. Part No.:
- NGB8207ABNT4G
- Manufacturer:
- Littelfuse
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Littelfuse | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 20A | |
| Maximum Collector Emitter Voltage Vceo | 365V | |
| Maximum Power Dissipation Pd | 165W | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Channel Type | N | |
| Pin Count | 3 | |
| Switching Speed | 6μs | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Emitter Voltage VGEO | 15 V | |
| Maximum Operating Temperature | 175°C | |
| Width | 15.88mm | |
| Standards/Approvals | RoHS | |
| Height | 4.83mm | |
| Length | 10.29mm | |
| Series | Ignition IGBT | |
| Energy Rating | 500mJ | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Littelfuse | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 20A | ||
Maximum Collector Emitter Voltage Vceo 365V | ||
Maximum Power Dissipation Pd 165W | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Channel Type N | ||
Pin Count 3 | ||
Switching Speed 6μs | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Emitter Voltage VGEO 15 V | ||
Maximum Operating Temperature 175°C | ||
Width 15.88mm | ||
Standards/Approvals RoHS | ||
Height 4.83mm | ||
Length 10.29mm | ||
Series Ignition IGBT | ||
Energy Rating 500mJ | ||
Automotive Standard No | ||
IGBT Discretes, ON Semiconductor
Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.
IGBT Discretes, ON Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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