Toshiba GT50JR22 IGBT, 50 A 600 V, 3-Pin TO-3P, Through Hole
- RS Stock No.:
- 796-5064P
- Mfr. Part No.:
- GT50JR22
- Manufacturer:
- Toshiba
Bulk discount available
Subtotal 10 units (supplied in a tube)*
PHP4,138.50
(exc. VAT)
PHP4,635.10
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- 96 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit |
|---|---|
| 10 - 49 | PHP413.85 |
| 50 - 99 | PHP401.43 |
| 100 - 249 | PHP389.38 |
| 250 + | PHP377.69 |
*price indicative
- RS Stock No.:
- 796-5064P
- Mfr. Part No.:
- GT50JR22
- Manufacturer:
- Toshiba
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Maximum Continuous Collector Current | 50 A | |
| Maximum Collector Emitter Voltage | 600 V | |
| Maximum Gate Emitter Voltage | ±25V | |
| Maximum Power Dissipation | 230 W | |
| Package Type | TO-3P | |
| Mounting Type | Through Hole | |
| Channel Type | N | |
| Pin Count | 3 | |
| Switching Speed | 1MHz | |
| Transistor Configuration | Single | |
| Dimensions | 15.5 x 4.5 x 20mm | |
| Maximum Operating Temperature | +175 °C | |
| Select all | ||
|---|---|---|
Brand Toshiba | ||
Maximum Continuous Collector Current 50 A | ||
Maximum Collector Emitter Voltage 600 V | ||
Maximum Gate Emitter Voltage ±25V | ||
Maximum Power Dissipation 230 W | ||
Package Type TO-3P | ||
Mounting Type Through Hole | ||
Channel Type N | ||
Pin Count 3 | ||
Switching Speed 1MHz | ||
Transistor Configuration Single | ||
Dimensions 15.5 x 4.5 x 20mm | ||
Maximum Operating Temperature +175 °C | ||
IGBT Discretes, Toshiba
For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.
IGBT Discretes & Modules, Toshiba
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.