STMicroelectronics STGF3NC120HD IGBT, 6 A 1200 V, 3-Pin TO-220FP, Through Hole

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PHP459.36

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PHP514.485

(inc. VAT)

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5 - 20PHP91.872PHP459.36
25 - 95PHP89.576PHP447.88
100 - 245PHP87.336PHP436.68
250 - 1245PHP85.154PHP425.77
1250 +PHP83.026PHP415.13

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Packaging Options:
RS Stock No.:
795-9094
Mfr. Part No.:
STGF3NC120HD
Manufacturer:
STMicroelectronics
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Brand

STMicroelectronics

Maximum Continuous Collector Current

6 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

25 W

Package Type

TO-220FP

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Switching Speed

1MHz

Transistor Configuration

Single

Dimensions

10.4 x 4.6 x 16.4mm

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

IGBT Discretes, STMicroelectronics


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IGBT Discretes & Modules, STMicroelectronics


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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