IXYS IXGP20N120B3 IGBT, 80 A 1200 V, 3-Pin TO-220, Through Hole
- RS Stock No.:
- 146-1730
- Mfr. Part No.:
- IXGP20N120B3
- Manufacturer:
- IXYS
This image is representative of the product range
Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 146-1730
- Mfr. Part No.:
- IXGP20N120B3
- Manufacturer:
- IXYS
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | IXYS | |
| Maximum Continuous Collector Current | 80 A | |
| Maximum Collector Emitter Voltage | 1200 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Maximum Power Dissipation | 180 W | |
| Package Type | TO-220 | |
| Mounting Type | Through Hole | |
| Channel Type | N | |
| Pin Count | 3 | |
| Switching Speed | 20kHz | |
| Transistor Configuration | Single | |
| Dimensions | 10.66 x 4.83 x 16mm | |
| Maximum Operating Temperature | +150 °C | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand IXYS | ||
Maximum Continuous Collector Current 80 A | ||
Maximum Collector Emitter Voltage 1200 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Maximum Power Dissipation 180 W | ||
Package Type TO-220 | ||
Mounting Type Through Hole | ||
Channel Type N | ||
Pin Count 3 | ||
Switching Speed 20kHz | ||
Transistor Configuration Single | ||
Dimensions 10.66 x 4.83 x 16mm | ||
Maximum Operating Temperature +150 °C | ||
Minimum Operating Temperature -55 °C | ||
IGBT Discretes, IXYS
For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Related links
- onsemi FGH40T120SMD IGBT 3-Pin TO-247, Through Hole
- STMicroelectronics GWA40MS120DF4AG Single IGBT 3-Pin TO-247, Through Hole
- Infineon IKY40N120CS6XKSA1 Single IGBT 3-Pin PG-TO247
- Infineon IGW40N120H3FKSA1 IGBT 3-Pin TO-247, Through Hole
- onsemi HGT1S10N120BNST IGBT 3-Pin D2PAK (TO-263), Surface Mount
- ROHM RGS80TSX2DGC11 Single IGBT 3-Pin TO-247N
- ROHM RGS80TSX2GC11 Single IGBT 3-Pin TO-247N
- onsemi FGH4L40T120LQD IGBT, 80 A 1200 V TO-247