STMicroelectronics STGD5NB120SZT4 IGBT, 10 A 1200 V, 3-Pin DPAK (TO-252), Surface Mount

This image is representative of the product range

View all IGBTs

Subtotal (1 reel of 2500 units)*

PHP195,382.50

(exc. VAT)

PHP218,827.50

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • Plus 5,000 unit(s) shipping from December 22, 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per Unit
Per Reel*
2500 +PHP78.153PHP195,382.50

*price indicative

RS Stock No.:
165-5304
Mfr. Part No.:
STGD5NB120SZT4
Manufacturer:
STMicroelectronics
Find similar products by selecting one or more attributes.
Select all

Brand

STMicroelectronics

Maximum Continuous Collector Current

10 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

75 W

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Channel Type

N

Pin Count

3

Transistor Configuration

Single

Dimensions

6.6 x 6.2 x 2.4mm

Maximum Operating Temperature

+150 °C

Gate Capacitance

430pF

Minimum Operating Temperature

-55 °C

Energy Rating

12.68mJ

COO (Country of Origin):
CN

IGBT Discretes, STMicroelectronics


For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.



IGBT Discretes & Modules, STMicroelectronics


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Related links