Infineon IGBT Module 1200 V

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Bulk discount available

Subtotal (1 tray of 10 units)*

PHP68,642.08

(exc. VAT)

PHP76,879.13

(inc. VAT)

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  • Shipping from June 05, 2026
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Units
Per Unit
Per Tray*
10 - 10PHP6,864.208PHP68,642.08
20 - 20PHP6,726.918PHP67,269.18
30 +PHP6,592.39PHP65,923.90

*price indicative

RS Stock No.:
244-5846
Mfr. Part No.:
FP75R12KT4B11BOSA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

IGBT Module

Maximum Collector Emitter Voltage Vceo

1200V

Number of Transistors

7

Maximum Power Dissipation Pd

385W

Minimum Operating Temperature

-40°C

Maximum Gate Emitter Voltage VGEO

20 V

Maximum Collector Emitter Saturation Voltage VceSAT

2.15V

Maximum Operating Temperature

150°C

Length

122mm

Height

17mm

Standards/Approvals

RoHS

Series

FP75R12KT4B11B

Width

62 mm

Automotive Standard

No

The infineon IGBT module is suitable for auxiliary inverters, motor drives, servo drives etc.

Electrical Features

Low switching losses

Tvj op = 150° C

VCEsat with positive temperature coefficient

Low VCEsat

Mechanical features

High power and thermal cycling capability

Integrated NTC temperature sensor

Copper base plate

Pressfit contact technology

Standard housing

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