Infineon FP75R12KT4B11BOSA1 IGBT Module 1200 V

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Subtotal (1 unit)*

PHP9,178.42

(exc. VAT)

PHP10,279.83

(inc. VAT)

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Units
Per Unit
1 - 1PHP9,178.42
2 - 2PHP8,994.84
3 - 3PHP8,814.89
4 - 4PHP8,638.56
5 +PHP8,465.89

*price indicative

Packaging Options:
RS Stock No.:
244-5848
Mfr. Part No.:
FP75R12KT4B11BOSA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

IGBT Module

Maximum Collector Emitter Voltage Vceo

1200V

Maximum Power Dissipation Pd

385W

Number of Transistors

7

Maximum Gate Emitter Voltage VGEO

20 V

Minimum Operating Temperature

-40°C

Maximum Collector Emitter Saturation Voltage VceSAT

2.15V

Maximum Operating Temperature

150°C

Series

FP75R12KT4B11B

Length

122mm

Height

17mm

Standards/Approvals

RoHS

Width

62 mm

Automotive Standard

No

The infineon IGBT module is suitable for auxiliary inverters, motor drives, servo drives etc.

Electrical Features

Low switching losses

Tvj op = 150° C

VCEsat with positive temperature coefficient

Low VCEsat

Mechanical features

High power and thermal cycling capability

Integrated NTC temperature sensor

Copper base plate

Pressfit contact technology

Standard housing

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