Infineon FP75R12KT4B11BOSA1 IGBT Module, 75 A 1200 V

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Subtotal (1 unit)*

PHP9,178.42

(exc. VAT)

PHP10,279.83

(inc. VAT)

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  • Shipping from January 18, 2027
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Units
Per Unit
1 - 1PHP9,178.42
2 - 2PHP8,994.84
3 - 3PHP8,814.89
4 - 4PHP8,638.56
5 +PHP8,465.89

*price indicative

Packaging Options:
RS Stock No.:
244-5848
Mfr. Part No.:
FP75R12KT4B11BOSA1
Manufacturer:
Infineon
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Brand

Infineon

Maximum Continuous Collector Current

75 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

385 W

Number of Transistors

7

The infineon IGBT module is suitable for auxiliary inverters, motor drives, servo drives etc.

Electrical Features
Low switching losses
Tvj op = 150° C
VCEsat with positive temperature coefficient
Low VCEsat
Mechanical features
High power and thermal cycling capability
Integrated NTC temperature sensor
Copper base plate
Pressfit contact technology
Standard housing

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.


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