Infineon IGBT Module 1200 V
- RS Stock No.:
- 244-5379
- Mfr. Part No.:
- FP100R12KT4BOSA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 tray of 10 units)*
PHP94,411.00
(exc. VAT)
PHP105,740.30
(inc. VAT)
Stock information currently inaccessible - Please check back later
Units | Per Unit | Per Tray* |
|---|---|---|
| 10 - 10 | PHP9,441.10 | PHP94,411.00 |
| 20 - 20 | PHP9,252.287 | PHP92,522.87 |
| 30 + | PHP9,067.268 | PHP90,672.68 |
*price indicative
- RS Stock No.:
- 244-5379
- Mfr. Part No.:
- FP100R12KT4BOSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | IGBT Module | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Number of Transistors | 7 | |
| Maximum Power Dissipation Pd | 515W | |
| Minimum Operating Temperature | -40°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.1V | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Series | FP100R12KT4 | |
| Width | 62 mm | |
| Length | 122mm | |
| Height | 17mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type IGBT Module | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Number of Transistors 7 | ||
Maximum Power Dissipation Pd 515W | ||
Minimum Operating Temperature -40°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.1V | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Operating Temperature 150°C | ||
Series FP100R12KT4 | ||
Width 62 mm | ||
Length 122mm | ||
Height 17mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The infineon IGBT module the maximum rated repetitive peak collector current is 200 A and collector-emitter saturation voltag 2.20 V, gate threshold voltage is 6.4 V.
Collector-emitter cut-off current 1.0 mA
Temperature under switching conditions 150° C
Gate-emitter leakage current 100 nA
Reverse transfer capacitance 0.27 nF
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