Infineon IGBT Module 1200 V EconoPIM

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Subtotal (1 tray of 10 units)*

PHP67,790.10

(exc. VAT)

PHP75,924.90

(inc. VAT)

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Units
Per Unit
Per Tray*
10 - 10PHP6,779.01PHP67,790.10
20 - 20PHP6,643.431PHP66,434.31
30 +PHP6,510.54PHP65,105.40

*price indicative

RS Stock No.:
244-5851
Mfr. Part No.:
FP75R12KT4BOSA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

IGBT Module

Maximum Collector Emitter Voltage Vceo

1200V

Maximum Power Dissipation Pd

385W

Number of Transistors

7

Package Type

EconoPIM

Maximum Collector Emitter Saturation Voltage VceSAT

2.15V

Maximum Gate Emitter Voltage VGEO

20 V

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

150°C

Width

62.5 mm

Height

17mm

Length

122mm

Series

FP75R12KT4B

Standards/Approvals

RoHS

Automotive Standard

No

The infineon IGBT module the maximum rated collector emitter voltage is 1200 V and toatal power dissipation is 355 W, maximum gate threshold voltage is 6.5 V.

Internal isolation basic insulation (class 1, IEC 61140)

Gate-emitter peak voltage + /- 20 V

Collector-emitter saturation voltage 2.15 V

Gate-emitter leakage current 400 nA

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