Infineon FP75R12KT4BOSA1 IGBT Module, 75 A 1200 V EconoPIM

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Subtotal (1 unit)*

PHP6,086.86

(exc. VAT)

PHP6,817.28

(inc. VAT)

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Units
Per Unit
1 - 1PHP6,086.86
2 - 2PHP5,965.13
3 - 3PHP5,845.82
4 - 4PHP5,728.95
5 +PHP5,614.49

*price indicative

Packaging Options:
RS Stock No.:
244-5854
Mfr. Part No.:
FP75R12KT4BOSA1
Manufacturer:
Infineon
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Brand

Infineon

Maximum Continuous Collector Current

75 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Number of Transistors

7

Package Type

EconoPIM

The infineon IGBT module the maximum rated collector emitter voltage is 1200 V and toatal power dissipation is 355 W, maximum gate threshold voltage is 6.5 V.

Internal isolation basic insulation (class 1, IEC 61140)
Gate-emitter peak voltage + /- 20 V
Collector-emitter saturation voltage 2.15 V
Gate-emitter leakage current 400 nA

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