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Infineon IKB40N65ES5ATMA1 IGBT, 79 A 650 V, 3-Pin PG-TO263-3

RS Stock No.:: 215-6655
Mfr. Part No.:: IKB40N65ES5ATMA1
Manufacturer:: Infineon

Infineon IKB40N65ES5ATMA1 IGBT, 79 A 650 V, 3-Pin PG-TO263-3

Bulk discount available

Subtotal (1 pack of 2 units)*

PHP510.84

(exc. VAT)

PHP572.14

(inc. VAT)

FREE delivery for orders over ₱3,000.00

In Stock

Plus 4,276 unit(s) shipping from December 29, 2025

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per Unit	Per Pack*
2 - 8	PHP255.42	PHP510.84
10 - 98	PHP234.395	PHP468.79
100 - 248	PHP216.46	PHP432.92
250 - 498	PHP201.005	PHP402.01
500 +	PHP195.435	PHP390.87

*price indicative

RS Stock No.:: 215-6655
Mfr. Part No.:: IKB40N65ES5ATMA1
Manufacturer:: Infineon

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Maximum Continuous Collector Current	79 A
	Maximum Collector Emitter Voltage	650 V
	Maximum Gate Emitter Voltage	±20 V, ±30 V
	Maximum Power Dissipation	230 W
	Package Type	PG-TO263-3
	Pin Count	3

	Select all
	Brand Infineon
	Maximum Continuous Collector Current 79 A
	Maximum Collector Emitter Voltage 650 V
	Maximum Gate Emitter Voltage ±20 V, ±30 V
	Maximum Power Dissipation 230 W
	Package Type PG-TO263-3
	Pin Count 3

Datasheet-IKB40N65ES5ATMA1

The Infineon high speed switching series fifth generation insulated-gate bipolar transistor.

High Efficiency
Low Switching Losses
Increased Reliability
Low Electromagnetic Interference

Infineon IKB40N65ES5ATMA1 IGBT, 79 A 650 V, 3-Pin PG-TO263-3

FREE delivery for orders over ₱3,000.00

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