Infineon IKB40N65ES5ATMA1 IGBT, 79 A 650 V, 3-Pin PG-TO263-3

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Subtotal (1 reel of 1000 units)*

PHP145,185.00

(exc. VAT)

PHP162,607.00

(inc. VAT)

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Per Reel*
1000 - 1000PHP145.185PHP145,185.00
2000 - 2000PHP139.377PHP139,377.00
3000 +PHP135.757PHP135,757.00

*price indicative

RS Stock No.:
215-6654
Mfr. Part No.:
IKB40N65ES5ATMA1
Manufacturer:
Infineon
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Brand

Infineon

Maximum Continuous Collector Current

79 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±20 V, ±30 V

Maximum Power Dissipation

230 W

Package Type

PG-TO263-3

Pin Count

3

The Infineon high speed switching series fifth generation insulated-gate bipolar transistor.

High Efficiency
Low Switching Losses
Increased Reliability
Low Electromagnetic Interference

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