Infineon IKB15N65EH5ATMA1, N-Channel IGBT Single Transistor IC, 30 A 650 V, 3-Pin TO-263, Surface
- RS Stock No.:
- 215-6648
- Mfr. Part No.:
- IKB15N65EH5ATMA1
- Manufacturer:
- Infineon
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View bulk pricing optionsSubtotal (1 pack of 5 units)*
PHP1,036.49
(exc. VAT)
PHP1,160.87
(inc. VAT)
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In Stock
- Plus 920 unit(s) shipping from September 28, 2026
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Units | Per Unit | Per Pack* |
|---|---|---|
| 5 - 5 | PHP207.298 | PHP1,036.49 |
| 10 - 95 | PHP190.30 | PHP951.50 |
| 100 - 245 | PHP175.638 | PHP878.19 |
| 250 - 495 | PHP162.98 | PHP814.90 |
| 500 + | PHP158.312 | PHP791.56 |
*price indicative
- RS Stock No.:
- 215-6648
- Mfr. Part No.:
- IKB15N65EH5ATMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Collector Current Ic | 30A | |
| Product Type | IGBT Single Transistor IC | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 105W | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Channel Type | N | |
| Pin Count | 3 | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Emitter Voltage VGEO | ±30 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.65V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | JEDEC47/20/22 | |
| Series | High Speed Fifth Generation | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current Ic 30A | ||
Product Type IGBT Single Transistor IC | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 105W | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Channel Type N | ||
Pin Count 3 | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Emitter Voltage VGEO ±30 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.65V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals JEDEC47/20/22 | ||
Series High Speed Fifth Generation | ||
Automotive Standard No | ||
The Infineon high speed switching insulated-gate bipolar transistor copacked with full rated current rapid 1 antiparallel diode also has 650v breakdown voltage.
High Efficiency
Low Switching Losses
Increased Reliability
Low Electromagnetic Interference