Infineon 512 kB FRAM 8-Pin SOIC

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Subtotal (1 tube of 97 units)*

PHP69,816.914

(exc. VAT)

PHP78,194.901

(inc. VAT)

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  • 388 unit(s) ready to ship from another location
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Units
Per Unit
Per Tube*
97 - 97PHP719.762PHP69,816.91
194 - 194PHP701.768PHP68,071.50
291 - 485PHP684.224PHP66,369.73
582 +PHP667.118PHP64,710.45

*price indicative

RS Stock No.:
188-5404
Mfr. Part No.:
FM24V05-G
Manufacturer:
Infineon
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Brand

Infineon

Memory Size

512kB

Product Type

FRAM

Organisation

64k x 8 Bit

Data Bus Width

8bit

Maximum Random Access Time

450ns

Maximum Clock Frequency

3.4MHz

Mount Type

Surface

Package Type

SOIC

Pin Count

8

Standards/Approvals

No

Width

3.98 mm

Length

4.97mm

Height

1.38mm

Maximum Operating Temperature

85°C

Maximum Supply Voltage

3.6V

Number of Bits per Word

8

Automotive Standard

AEC-Q100

Minimum Operating Temperature

-40°C

Minimum Supply Voltage

2V

Number of Words

64K

COO (Country of Origin):
US

FRAM, Cypress Semiconductor


Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.

Nonvolatile Ferroelectric RAM Memory

Fast write speed

High endurance

Low power consumption

FRAM (Ferroelectric RAM)


FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.

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