Infineon 512 kB FRAM 8-Pin SOIC, FM24V05-G

This image is representative of the product range

Bulk discount available

Subtotal (1 unit)*

PHP592.88

(exc. VAT)

PHP664.03

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • Plus 412 unit(s) shipping from February 02, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per Unit
1 - 9PHP592.88
10 - 24PHP575.10
25 - 99PHP557.85
100 - 499PHP541.11
500 +PHP524.87

*price indicative

Packaging Options:
RS Stock No.:
124-2984
Mfr. Part No.:
FM24V05-G
Manufacturer:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Product Type

FRAM

Memory Size

512kB

Organisation

64k x 8 Bit

Data Bus Width

8bit

Maximum Random Access Time

450ns

Mount Type

Surface

Maximum Clock Frequency

3.4MHz

Package Type

SOIC

Pin Count

8

Height

1.38mm

Width

3.98 mm

Length

4.97mm

Standards/Approvals

No

Maximum Operating Temperature

85°C

Automotive Standard

AEC-Q100

Number of Words

64K

Minimum Supply Voltage

2V

Maximum Supply Voltage

3.6V

Minimum Operating Temperature

-40°C

Number of Bits per Word

8

FRAM, Cypress Semiconductor


Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.

Nonvolatile Ferroelectric RAM Memory

Fast write speed

High endurance

Low power consumption

FRAM (Ferroelectric RAM)


FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.

Related links