Infineon 256 kB Parallel FRAM 28-Pin SOIC

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Subtotal (1 tube of 27 units)*

PHP21,335.589

(exc. VAT)

PHP23,895.864

(inc. VAT)

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Units
Per Unit
Per Tube*
27 - 27PHP790.207PHP21,335.59
54 - 81PHP771.093PHP20,819.51
108 +PHP678.614PHP18,322.58

*price indicative

RS Stock No.:
188-5393
Mfr. Part No.:
FM1808B-SG
Manufacturer:
Infineon
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Brand

Infineon

Product Type

FRAM

Memory Size

256kB

Organisation

32K x 8 Bit

Interface Type

Parallel

Data Bus Width

8bit

Maximum Random Access Time

70ns

Mount Type

Surface

Maximum Clock Frequency

1MHz

Package Type

SOIC

Pin Count

28

Standards/Approvals

No

Width

7.62 mm

Length

18.11mm

Height

2.37mm

Maximum Operating Temperature

85°C

Number of Words

32k

Minimum Operating Temperature

-40°C

Number of Bits per Word

8

Maximum Supply Voltage

5.5V

Automotive Standard

AEC-Q100

Minimum Supply Voltage

4.5V

COO (Country of Origin):
US

FRAM, Cypress Semiconductor


Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.

Nonvolatile Ferroelectric RAM Memory

Fast write speed

High endurance

Low power consumption

FRAM (Ferroelectric RAM)


FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.

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