Infineon 256 kB Parallel FRAM 28-Pin SOIC, FM18W08-SG

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PHP917.47

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PHP1,027.57

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  • Plus 115 unit(s) shipping from February 11, 2026
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10 - 49PHP894.53
50 - 99PHP872.17
100 - 499PHP850.37
500 +PHP829.11

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Packaging Options:
RS Stock No.:
125-4205
Mfr. Part No.:
FM18W08-SG
Manufacturer:
Infineon
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Brand

Infineon

Product Type

FRAM

Memory Size

256kB

Organisation

32K x 8 Bit

Interface Type

Parallel

Data Bus Width

8bit

Maximum Random Access Time

70ns

Maximum Clock Frequency

1MHz

Mount Type

Surface

Package Type

SOIC

Pin Count

28

Standards/Approvals

No

Length

18.11mm

Width

7.62 mm

Height

2.37mm

Maximum Operating Temperature

85°C

Maximum Supply Voltage

5.5V

Minimum Supply Voltage

2.7V

Number of Words

32k

Automotive Standard

AEC-Q100

Number of Bits per Word

8

Minimum Operating Temperature

-40°C

FRAM, Cypress Semiconductor


Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.

Nonvolatile Ferroelectric RAM Memory

Fast write speed

High endurance

Low power consumption

FRAM (Ferroelectric RAM)


FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.

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