Infineon 256 kB SPI FRAM 8-Pin DFN, FM25V02A-DG

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Subtotal (1 pack of 2 units)*

PHP860.05

(exc. VAT)

PHP963.256

(inc. VAT)

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Units
Per Unit
Per Pack*
2 - 8PHP430.025PHP860.05
10 - 18PHP417.12PHP834.24
20 - 98PHP404.605PHP809.21
100 - 498PHP392.465PHP784.93
500 +PHP380.69PHP761.38

*price indicative

Packaging Options:
RS Stock No.:
124-2986
Mfr. Part No.:
FM25V02A-DG
Manufacturer:
Infineon
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Brand

Infineon

Product Type

FRAM

Memory Size

256kB

Organisation

32K x 8 Bit

Interface Type

SPI

Data Bus Width

8bit

Maximum Random Access Time

16ns

Mount Type

Surface

Maximum Clock Frequency

40MHz

Package Type

DFN

Pin Count

8

Length

4.5mm

Width

4 mm

Standards/Approvals

No

Height

0.75mm

Maximum Operating Temperature

85°C

Minimum Supply Voltage

2V

Minimum Operating Temperature

-40°C

Automotive Standard

AEC-Q100

Maximum Supply Voltage

3.6V

Number of Bits per Word

8

Number of Words

32k

FRAM, Cypress Semiconductor


Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.

Nonvolatile Ferroelectric RAM Memory

Fast write speed

High endurance

Low power consumption

FRAM (Ferroelectric RAM)


FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.

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