Infineon 256 kB Parallel FRAM 28-Pin SOIC

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Subtotal 10 units (supplied in a tube)*

PHP7,167.70

(exc. VAT)

PHP8,027.80

(inc. VAT)

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Units
Per Unit
10 - 24PHP716.77
25 - 99PHP695.26
100 - 249PHP674.40
250 +PHP654.17

*price indicative

Packaging Options:
RS Stock No.:
124-2981P
Mfr. Part No.:
FM1808B-SG
Manufacturer:
Infineon
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Brand

Infineon

Product Type

FRAM

Memory Size

256kB

Organisation

32K x 8 Bit

Interface Type

Parallel

Data Bus Width

8bit

Maximum Random Access Time

70ns

Maximum Clock Frequency

1MHz

Mount Type

Surface

Package Type

SOIC

Pin Count

28

Width

7.62 mm

Length

18.11mm

Standards/Approvals

No

Height

2.37mm

Maximum Operating Temperature

85°C

Automotive Standard

AEC-Q100

Number of Words

32k

Maximum Supply Voltage

5.5V

Minimum Operating Temperature

-40°C

Minimum Supply Voltage

4.5V

Number of Bits per Word

8

COO (Country of Origin):
US

FRAM, Cypress Semiconductor


Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.

Nonvolatile Ferroelectric RAM Memory

Fast write speed

High endurance

Low power consumption

FRAM (Ferroelectric RAM)


FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.

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