Nexperia PBSS5350T,215 Transistor, -2 A PNP, -50 V, 3-Pin SOT-23
- RS Stock No.:
- 518-1974
- Mfr. Part No.:
- PBSS5350T,215
- Manufacturer:
- Nexperia
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 10 units)*
PHP143.96
(exc. VAT)
PHP161.24
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- 10 unit(s) ready to ship from another location
- Plus 370 unit(s) shipping from May 13, 2026
- Plus 60 unit(s) shipping from May 13, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 10 - 10 | PHP14.396 | PHP143.96 |
| 20 - 40 | PHP13.916 | PHP139.16 |
| 50 - 90 | PHP13.341 | PHP133.41 |
| 100 - 190 | PHP12.958 | PHP129.58 |
| 200 + | PHP12.671 | PHP126.71 |
*price indicative
- RS Stock No.:
- 518-1974
- Mfr. Part No.:
- PBSS5350T,215
- Manufacturer:
- Nexperia
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Nexperia | |
| Product Type | Transistor | |
| Maximum DC Collector Current Idc | -2A | |
| Maximum Collector Emitter Voltage Vceo | -50V | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Transistor Configuration | Single | |
| Maximum Collector Base Voltage VCBO | 50V | |
| Maximum Power Dissipation Pd | 1.2W | |
| Minimum DC Current Gain hFE | 80 | |
| Transistor Polarity | PNP | |
| Minimum Operating Temperature | -65°C | |
| Maximum Emitter Base Voltage VEBO | 5V | |
| Maximum Transition Frequency ft | 100MHz | |
| Maximum Operating Temperature | 150°C | |
| Pin Count | 3 | |
| Length | 3mm | |
| Height | 1.1mm | |
| Series | PBSS5350T | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Nexperia | ||
Product Type Transistor | ||
Maximum DC Collector Current Idc -2A | ||
Maximum Collector Emitter Voltage Vceo -50V | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Transistor Configuration Single | ||
Maximum Collector Base Voltage VCBO 50V | ||
Maximum Power Dissipation Pd 1.2W | ||
Minimum DC Current Gain hFE 80 | ||
Transistor Polarity PNP | ||
Minimum Operating Temperature -65°C | ||
Maximum Emitter Base Voltage VEBO 5V | ||
Maximum Transition Frequency ft 100MHz | ||
Maximum Operating Temperature 150°C | ||
Pin Count 3 | ||
Length 3mm | ||
Height 1.1mm | ||
Series PBSS5350T | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Low Saturation Voltage PNP Transistors
A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage PNP Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in Compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.