Nexperia PBSS5240T,215 Transistor, -2 A PNP, -40 V, 3-Pin SOT-23
- RS Stock No.:
- 518-1845
- Mfr. Part No.:
- PBSS5240T,215
- Manufacturer:
- Nexperia
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PHP6.786
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PHP7.60
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- RS Stock No.:
- 518-1845
- Mfr. Part No.:
- PBSS5240T,215
- Manufacturer:
- Nexperia
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Nexperia | |
| Product Type | Transistor | |
| Maximum DC Collector Current Idc | -2A | |
| Maximum Collector Emitter Voltage Vceo | -40V | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Transistor Configuration | Single | |
| Maximum Collector Base Voltage VCBO | 40V | |
| Maximum Transition Frequency ft | 200MHz | |
| Maximum Power Dissipation Pd | 480mW | |
| Transistor Polarity | PNP | |
| Minimum DC Current Gain hFE | 100 | |
| Maximum Emitter Base Voltage VEBO | 5V | |
| Minimum Operating Temperature | -65°C | |
| Pin Count | 3 | |
| Maximum Operating Temperature | 150°C | |
| Series | PBSS5240T | |
| Width | 2.5 mm | |
| Length | 3mm | |
| Standards/Approvals | RoHS | |
| Height | 1.1mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Nexperia | ||
Product Type Transistor | ||
Maximum DC Collector Current Idc -2A | ||
Maximum Collector Emitter Voltage Vceo -40V | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Transistor Configuration Single | ||
Maximum Collector Base Voltage VCBO 40V | ||
Maximum Transition Frequency ft 200MHz | ||
Maximum Power Dissipation Pd 480mW | ||
Transistor Polarity PNP | ||
Minimum DC Current Gain hFE 100 | ||
Maximum Emitter Base Voltage VEBO 5V | ||
Minimum Operating Temperature -65°C | ||
Pin Count 3 | ||
Maximum Operating Temperature 150°C | ||
Series PBSS5240T | ||
Width 2.5 mm | ||
Length 3mm | ||
Standards/Approvals RoHS | ||
Height 1.1mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Low Saturation Voltage PNP Transistors
A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage PNP Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in Compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.