Specifications

Technical data sheets

Legislation and Compliance

Product Details

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Select all	Attribute	Value
	Brand	onsemi
	Product Type	Digital Transistor
	Maximum Collector Emitter Voltage Vceo	-80V
	Mount Type	Surface
	Transistor Configuration	Single
	Minimum DC Current Gain hFE	40
	Maximum Power Dissipation Pd	20W
	Maximum Emitter Base Voltage VEBO	5V dc
	Transistor Polarity	PNP
	Pin Count	2
	Maximum Operating Temperature	150°C
	Height	2.25mm
	Standards/Approvals	No
	Length	6.73mm
	Width	6.22 mm
	Series	NJVMJD45H11
	Automotive Standard	AEC-Q101

	Select all
	Brand onsemi
	Product Type Digital Transistor
	Maximum Collector Emitter Voltage Vceo -80V
	Mount Type Surface
	Transistor Configuration Single
	Minimum DC Current Gain hFE 40
	Maximum Power Dissipation Pd 20W
	Maximum Emitter Base Voltage VEBO 5V dc
	Transistor Polarity PNP
	Pin Count 2
	Maximum Operating Temperature 150°C
	Height 2.25mm
	Standards/Approvals No
	Length 6.73mm
	Width 6.22 mm
	Series NJVMJD45H11
	Automotive Standard AEC-Q101

Datasheet NJVMJD45H11G

COO (Country of Origin):: VN

The Bipolar Power Transistor is designed for general purpose power and switching output or driver stages in applications such as switching regulators, converters and power amplifiers.

Lead Formed for Surface Mount Application in Plastic Sleeves (No Suffix)

Straight Lead Version in Plastic Sleeves ("-1" Suffix)

Lead Formed Version in 16 mm Tape and Reel for Surface Mount ("T4" Suffix)

Electrically Similar to Popular D44H/D45H Series

Low Collector Emitter Saturation Voltage VCE(sat) = 1.0 Volt Max @ 8.0 Amperes

Fast Switching Speeds

Complementary Pairs Simplifies Designs

NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements, PPAP capable

These Devices are Pb-Free

onsemi NJVMJD45H11G Digital Transistor, -80 V PNP Surface, 2-Pin

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