onsemi FGD3245G2-F085 Digital Transistor, 450 (Breakdown) V, 2 + Tab-Pin DPAK

The FGB3245G2_F085 and FGD3245G2 are N-channel IGBTs designed in Fairchild's EcoSPARK® 2 technology, which helps in eliminating external protection circuitry. The technology is optimized for driving the coil in the harsh environment of automotive ignition systems and offers outstanding Vsat and SCIS Energy capability also at elevated operating temperatures. The logic level gate input is ESD protected and features an integrated gate resistor. An integrated zener-circuitry clamps the IGBT's collecter- to-emitter voltage at 450 V, which enables systems requiring a higher spark voltage.

SCIS Energy = 320 mJ at TJ = 25°C
Logic Level Gate Drive
Low Saturation Voltage

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