onsemi Digital Transistor, 450 V N-Channel 23 A Surface, 2-Pin
- RS Stock No.:
- 186-7394
- Mfr. Part No.:
- FGD3245G2-F085
- Manufacturer:
- onsemi
This image is representative of the product range
Subtotal (1 reel of 2500 units)*
PHP208,067.50
(exc. VAT)
PHP233,035.00
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Temporarily out of stock
- Shipping from November 30, 2026
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Units | Per Unit | Per Reel* |
|---|---|---|
| 2500 + | PHP83.227 | PHP208,067.50 |
*price indicative
- RS Stock No.:
- 186-7394
- Mfr. Part No.:
- FGD3245G2-F085
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | Digital Transistor | |
| Maximum Collector Emitter Voltage Vceo | 450V | |
| Mount Type | Surface | |
| Transistor Configuration | Single | |
| Maximum Power Dissipation Pd | 150W | |
| Maximum Continuous Collector Current Ic | 23A | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.85V | |
| Transistor Polarity | N-Channel | |
| Pin Count | 2 | |
| Maximum Operating Temperature | 175°C | |
| Series | EcoSPARK-2 | |
| Standards/Approvals | RoHS | |
| Length | 6.73mm | |
| Height | 2.26mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type Digital Transistor | ||
Maximum Collector Emitter Voltage Vceo 450V | ||
Mount Type Surface | ||
Transistor Configuration Single | ||
Maximum Power Dissipation Pd 150W | ||
Maximum Continuous Collector Current Ic 23A | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.85V | ||
Transistor Polarity N-Channel | ||
Pin Count 2 | ||
Maximum Operating Temperature 175°C | ||
Series EcoSPARK-2 | ||
Standards/Approvals RoHS | ||
Length 6.73mm | ||
Height 2.26mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- PH
The FGB3245G2_F085 and FGD3245G2 are N-channel IGBTs designed in Fairchild's EcoSPARK® 2 technology, which helps in eliminating external protection circuitry. The technology is optimized for driving the coil in the harsh environment of automotive ignition systems and offers outstanding Vsat and SCIS Energy capability also at elevated operating temperatures. The logic level gate input is ESD protected and features an integrated gate resistor. An integrated zener-circuitry clamps the IGBT's collecter- to-emitter voltage at 450 V, which enables systems requiring a higher spark voltage.
SCIS Energy = 320 mJ at TJ = 25°C
Logic Level Gate Drive
Low Saturation Voltage
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