onsemi MJB44H11G Transistor, 20 A NPN, 80 V dc, 4-Pin TO-263
- RS Stock No.:
- 184-4959
- Mfr. Part No.:
- MJB44H11G
- Manufacturer:
- onsemi
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 10 units)*
PHP516.80
(exc. VAT)
PHP578.80
(inc. VAT)
Stock information currently inaccessible - Please check back later
Units | Per Unit | Per Pack* |
|---|---|---|
| 10 - 20 | PHP51.68 | PHP516.80 |
| 30 + | PHP48.386 | PHP483.86 |
*price indicative
- RS Stock No.:
- 184-4959
- Mfr. Part No.:
- MJB44H11G
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | Transistor | |
| Maximum DC Collector Current Idc | 20A | |
| Maximum Collector Emitter Voltage Vceo | 80V dc | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Transistor Configuration | Single | |
| Maximum Power Dissipation Pd | 50W | |
| Transistor Polarity | NPN | |
| Minimum DC Current Gain hFE | 60 | |
| Maximum Emitter Base Voltage VEBO | 5V dc | |
| Minimum Operating Temperature | -55°C | |
| Maximum Transition Frequency ft | 1MHz | |
| Maximum Operating Temperature | 150°C | |
| Pin Count | 4 | |
| Standards/Approvals | No | |
| Height | 4.83mm | |
| Length | 11.05mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type Transistor | ||
Maximum DC Collector Current Idc 20A | ||
Maximum Collector Emitter Voltage Vceo 80V dc | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Transistor Configuration Single | ||
Maximum Power Dissipation Pd 50W | ||
Transistor Polarity NPN | ||
Minimum DC Current Gain hFE 60 | ||
Maximum Emitter Base Voltage VEBO 5V dc | ||
Minimum Operating Temperature -55°C | ||
Maximum Transition Frequency ft 1MHz | ||
Maximum Operating Temperature 150°C | ||
Pin Count 4 | ||
Standards/Approvals No | ||
Height 4.83mm | ||
Length 11.05mm | ||
Automotive Standard AEC-Q101 | ||
The PNP Bipolar Power Transistor is designed for general purpose power amplification and switching such as output or driver stages in applications such as switching regulators, converters and power amplifiers. The MJB44H11 (NPN) and MJB45H11 (PNP) are complementary devices.
Low Collector-Emitter Saturation Voltage - VCE(sat) = 1.0 V (Max) @ 8.0 A
Fast Switching Speeds
Complementary Pairs Simplifies Designs
NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements, PPAP Capable
These Devices are Pb-Free, Halogen Free/BFR Free
Related links
- onsemi Transistor 80 V dc, 4-Pin TO-263
- onsemi MJK44H11TWG Bipolar Transistor 80 V dc, 4-Pin LFPAK4 5x6
- onsemi NJVMJK44H11TWG Bipolar Transistor 80 V dc, 4-Pin SOT-669
- onsemi MJD44H11-1G Bipolar Transistor 80 V dc, 4-Pin DPAK
- STMicroelectronics Bipolar Transistor 80 V, 3-Pin TO-263
- STMicroelectronics MJB44H11T4-A Bipolar Transistor 80 V, 3-Pin TO-263
- onsemi Transistor 80 V dc, 3-Pin TO-225
- onsemi MJK45H11TWG Bipolar Transistor 80 V dc, 4-Pin LFPAK4 5x6