onsemi MJD44H11-1G Bipolar Transistor, 8 A NPN, 80 V dc, 4-Pin DPAK

View all Bipolar Transistors
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Subtotal (1 tube of 75 units)*

PHP1,881.00

(exc. VAT)

PHP2,106.75

(inc. VAT)

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Units
Per Unit
Per Tube*
75 - 675PHP25.08PHP1,881.00
750 - 1425PHP24.328PHP1,824.60
1500 +PHP23.598PHP1,769.85

*price indicative

RS Stock No.:
184-4311
Mfr. Part No.:
MJD44H11-1G
Manufacturer:
onsemi
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Brand

onsemi

Product Type

Bipolar Transistor

Maximum DC Collector Current Idc

8A

Maximum Collector Emitter Voltage Vceo

80V dc

Package Type

TO-252

Mount Type

Surface

Transistor Configuration

Single

Maximum Emitter Base Voltage VEBO

5V dc

Transistor Polarity

NPN

Maximum Transition Frequency ft

1MHz

Minimum DC Current Gain hFE

40

Maximum Power Dissipation Pd

20W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Pin Count

4

Length

6.73mm

Series

MJD44H11

Standards/Approvals

No

Height

2.38mm

Width

6.22 mm

Automotive Standard

AEC-Q101

COO (Country of Origin):
MY
The Bipolar Power Transistor is designed for general purpose power and switching output or driver stages in applications such as switching regulators, converters and power amplifiers.

Lead Formed for Surface Mount Application in Plastic Sleeves (No Suffix)

Straight Lead Version in Plastic Sleeves ("-1" Suffix)

Lead Formed Version in 16 mm Tape and Reel for Surface Mount ("T4" Suffix)

Electrically Similar to Popular D44H/D45H Series

Low Collector Emitter Saturation Voltage VCE(sat) = 1.0 Volt Max @ 8.0 Amperes

Fast Switching Speeds

Complementary Pairs Simplifies Designs

These Devices are Pb-Free

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