onsemi Transistor, 20 A NPN, 80 V, 4-Pin TO-263
- RS Stock No.:
- 184-4309
- Mfr. Part No.:
- MJB44H11G
- Manufacturer:
- onsemi
Bulk discount available
Subtotal (1 tube of 50 units)*
PHP3,292.80
(exc. VAT)
PHP3,687.95
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- Plus 50 unit(s) shipping from March 30, 2026
- Plus 50 unit(s) shipping from May 14, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Tube* |
|---|---|---|
| 50 - 200 | PHP65.856 | PHP3,292.80 |
| 250 - 450 | PHP64.21 | PHP3,210.50 |
| 500 + | PHP62.604 | PHP3,130.20 |
*price indicative
- RS Stock No.:
- 184-4309
- Mfr. Part No.:
- MJB44H11G
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | Transistor | |
| Maximum DC Collector Current Idc | 20A | |
| Maximum Collector Emitter Voltage Vceo | 80V | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Transistor Configuration | Single | |
| Maximum Emitter Base Voltage VEBO | 5V | |
| Minimum Operating Temperature | -55°C | |
| Transistor Polarity | NPN | |
| Maximum Power Dissipation Pd | 50W | |
| Maximum Transition Frequency ft | 1MHz | |
| Minimum DC Current Gain hFE | 60 | |
| Pin Count | 4 | |
| Maximum Operating Temperature | 150°C | |
| Length | 11.05mm | |
| Height | 4.83mm | |
| Standards/Approvals | No | |
| Width | 10.29 mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type Transistor | ||
Maximum DC Collector Current Idc 20A | ||
Maximum Collector Emitter Voltage Vceo 80V | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Transistor Configuration Single | ||
Maximum Emitter Base Voltage VEBO 5V | ||
Minimum Operating Temperature -55°C | ||
Transistor Polarity NPN | ||
Maximum Power Dissipation Pd 50W | ||
Maximum Transition Frequency ft 1MHz | ||
Minimum DC Current Gain hFE 60 | ||
Pin Count 4 | ||
Maximum Operating Temperature 150°C | ||
Length 11.05mm | ||
Height 4.83mm | ||
Standards/Approvals No | ||
Width 10.29 mm | ||
Automotive Standard AEC-Q101 | ||
The PNP Bipolar Power Transistor is designed for general purpose power amplification and switching such as output or driver stages in applications such as switching regulators, converters and power amplifiers. The MJB44H11 (NPN) and MJB45H11 (PNP) are complementary devices.
Low Collector-Emitter Saturation Voltage - VCE(sat) = 1.0 V (Max) @ 8.0 A
Fast Switching Speeds
Complementary Pairs Simplifies Designs
NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements, PPAP Capable
These Devices are Pb-Free, Halogen Free/BFR Free
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