MPN

onsemi Transistor, 20 A NPN, 80 V, 4-Pin TO-263

RS Stock No.:: 184-4309
Mfr. Part No.:: MJB44H11G
Manufacturer:: onsemi

onsemi Transistor, 20 A NPN, 80 V, 4-Pin TO-263

This image is representative of the product range

Bulk discount available

Subtotal (1 tube of 50 units)*

PHP3,292.80

(exc. VAT)

PHP3,687.95

(inc. VAT)

Add 50 units to get free delivery

Orders below PHP3,000.00 (exc. VAT) cost PHP150.00.

In Stock

200 unit(s) ready to ship from another location

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per Unit	Per Tube*
50 - 200	PHP65.856	PHP3,292.80
250 - 450	PHP64.21	PHP3,210.50
500 +	PHP62.604	PHP3,130.20

*price indicative

RS Stock No.:: 184-4309
Mfr. Part No.:: MJB44H11G
Manufacturer:: onsemi

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	onsemi
	Product Type	Transistor
	Maximum DC Collector Current Idc	20A
	Maximum Collector Emitter Voltage Vceo	80V
	Package Type	TO-263
	Mount Type	Surface
	Transistor Configuration	Single
	Maximum Emitter Base Voltage VEBO	5V
	Transistor Polarity	NPN
	Minimum DC Current Gain hFE	60
	Maximum Power Dissipation Pd	50W
	Maximum Transition Frequency ft	1MHz
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Pin Count	4
	Standards/Approvals	No
	Width	10.29 mm
	Length	11.05mm
	Height	4.83mm
	Automotive Standard	AEC-Q101

	Select all
	Brand onsemi
	Product Type Transistor
	Maximum DC Collector Current Idc 20A
	Maximum Collector Emitter Voltage Vceo 80V
	Package Type TO-263
	Mount Type Surface
	Transistor Configuration Single
	Maximum Emitter Base Voltage VEBO 5V
	Transistor Polarity NPN
	Minimum DC Current Gain hFE 60
	Maximum Power Dissipation Pd 50W
	Maximum Transition Frequency ft 1MHz
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Pin Count 4
	Standards/Approvals No
	Width 10.29 mm
	Length 11.05mm
	Height 4.83mm
	Automotive Standard AEC-Q101

Datasheet MJB44H11G

The PNP Bipolar Power Transistor is designed for general purpose power amplification and switching such as output or driver stages in applications such as switching regulators, converters and power amplifiers. The MJB44H11 (NPN) and MJB45H11 (PNP) are complementary devices.

Low Collector-Emitter Saturation Voltage - VCE(sat) = 1.0 V (Max) @ 8.0 A

Fast Switching Speeds

Complementary Pairs Simplifies Designs

NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements, PPAP Capable

These Devices are Pb-Free, Halogen Free/BFR Free

onsemi Transistor, 20 A NPN, 80 V, 4-Pin TO-263

Add 50 units to get free delivery

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