Intelligent Memory IM1216SDBABG-6I SDRAM 128 MB Surface, 54-Pin 16 bit FBGA
- RS Stock No.:
- 588-653
- Mfr. Part No.:
- IM1216SDBABG-6I
- Manufacturer:
- Intelligent Memory
Subtotal (1 pack of 2 units)*
PHP501.64
(exc. VAT)
PHP561.84
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- 10 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 2 + | PHP250.82 | PHP501.64 |
*price indicative
- RS Stock No.:
- 588-653
- Mfr. Part No.:
- IM1216SDBABG-6I
- Manufacturer:
- Intelligent Memory
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Intelligent Memory | |
| Memory Size | 128MB | |
| Product Type | SDRAM | |
| Organisation | 8M x 16 | |
| Data Bus Width | 16bit | |
| Number of Bits per Word | 16 | |
| Maximum Clock Frequency | 200MHz | |
| Maximum Random Access Time | 5ns | |
| Number of Words | 8K | |
| Mount Type | Surface | |
| Package Type | FBGA | |
| Pin Count | 54 | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 85°C | |
| Standards/Approvals | AEC-Q100, RoHS | |
| Width | 8 mm | |
| Maximum Supply Voltage | 3.6V | |
| Supply Current | 65mA | |
| Minimum Supply Voltage | 3V | |
| Automotive Standard | AEC-Q100 | |
| Select all | ||
|---|---|---|
Brand Intelligent Memory | ||
Memory Size 128MB | ||
Product Type SDRAM | ||
Organisation 8M x 16 | ||
Data Bus Width 16bit | ||
Number of Bits per Word 16 | ||
Maximum Clock Frequency 200MHz | ||
Maximum Random Access Time 5ns | ||
Number of Words 8K | ||
Mount Type Surface | ||
Package Type FBGA | ||
Pin Count 54 | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 85°C | ||
Standards/Approvals AEC-Q100, RoHS | ||
Width 8 mm | ||
Maximum Supply Voltage 3.6V | ||
Supply Current 65mA | ||
Minimum Supply Voltage 3V | ||
Automotive Standard AEC-Q100 | ||
- COO (Country of Origin):
- TW
The Intelligent Memory Four bank Synchronous DRAM organized as 4 banks x 2Mbit x 16 . it achieves high speed data transfer rates up to 200 MHz by employing a chip architecture that prefetches multiple bits and then synchronizes the output data to a system clock.
Multiple burst read with single write operation
Automatic and controlled precharge command
Power down mode
Auto refresh and self refresh
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