STMicroelectronics 650 V 12 A Diode 2-Pin TO-220 STPSC12065D
- RS Stock No.:
- 201-0889
- Mfr. Part No.:
- STPSC12065D
- Manufacturer:
- STMicroelectronics
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Subtotal (1 pack of 5 units)*
PHP976.08
(exc. VAT)
PHP1,093.21
(inc. VAT)
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Units | Per Unit | Per Pack* |
|---|---|---|
| 5 - 5 | PHP195.216 | PHP976.08 |
| 10 - 20 | PHP165.596 | PHP827.98 |
| 25 + | PHP162.22 | PHP811.10 |
*price indicative
- RS Stock No.:
- 201-0889
- Mfr. Part No.:
- STPSC12065D
- Manufacturer:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | Diode | |
| Mount Type | Through Hole | |
| Package Type | TO-220 | |
| Maximum Continuous Forward Current If | 12A | |
| Peak Reverse Repetitive Voltage Vrrm | 650V | |
| Diode Configuration | Single | |
| Series | STPSC12065 | |
| Pin Count | 2 | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 220A | |
| Peak Reverse Current Ir | 50μA | |
| Maximum Forward Voltage Vf | 1.65V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 175°C | |
| Length | 15.95mm | |
| Standards/Approvals | No | |
| Width | 10.98 mm | |
| Height | 4.3mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type Diode | ||
Mount Type Through Hole | ||
Package Type TO-220 | ||
Maximum Continuous Forward Current If 12A | ||
Peak Reverse Repetitive Voltage Vrrm 650V | ||
Diode Configuration Single | ||
Series STPSC12065 | ||
Pin Count 2 | ||
Peak Non-Repetitive Forward Surge Current Ifsm 220A | ||
Peak Reverse Current Ir 50μA | ||
Maximum Forward Voltage Vf 1.65V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 175°C | ||
Length 15.95mm | ||
Standards/Approvals No | ||
Width 10.98 mm | ||
Height 4.3mm | ||
Automotive Standard No | ||
The STMicroelectronics 650V power schottky silicon carbide diode is an ultra high performance power schottky diode. It is manufactured using a silicon carbide substrate. Its high forward surge capability ensures good robustness during transient phases.
No or negligible reverse recovery
Switching behaviour independent of temperature
High forward surge capability
Operating Tj from -40 °C to 175 °C
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