STMicroelectronics 650 V 10 A Schottky Diode Schottky 2-Pin TO-220AC STPSC10065D
- RS Stock No.:
- 164-7015
- Mfr. Part No.:
- STPSC10065D
- Manufacturer:
- STMicroelectronics
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PHP448.92
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PHP502.80
(inc. VAT)
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Units | Per Unit | Per Pack* |
|---|---|---|
| 2 - 8 | PHP224.46 | PHP448.92 |
| 10 + | PHP217.73 | PHP435.46 |
*price indicative
- RS Stock No.:
- 164-7015
- Mfr. Part No.:
- STPSC10065D
- Manufacturer:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Mount Type | Through Hole | |
| Product Type | Schottky Diode | |
| Package Type | TO-220AC | |
| Maximum Continuous Forward Current If | 10A | |
| Peak Reverse Repetitive Voltage Vrrm | 650V | |
| Series | STPSC10065 | |
| Diode Configuration | Single | |
| Rectifier Type | Schottky | |
| Pin Count | 2 | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 48A | |
| Peak Reverse Current Ir | 130μA | |
| Maximum Forward Voltage Vf | 1.65V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.4mm | |
| Height | 15.75mm | |
| Standards/Approvals | ECOPACK, UL94 V0 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Mount Type Through Hole | ||
Product Type Schottky Diode | ||
Package Type TO-220AC | ||
Maximum Continuous Forward Current If 10A | ||
Peak Reverse Repetitive Voltage Vrrm 650V | ||
Series STPSC10065 | ||
Diode Configuration Single | ||
Rectifier Type Schottky | ||
Pin Count 2 | ||
Peak Non-Repetitive Forward Surge Current Ifsm 48A | ||
Peak Reverse Current Ir 130μA | ||
Maximum Forward Voltage Vf 1.65V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 175°C | ||
Length 10.4mm | ||
Height 15.75mm | ||
Standards/Approvals ECOPACK, UL94 V0 | ||
Automotive Standard No | ||
The SiC diode is an ultra high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. Especially suited for use in PFC applications, this ST SiC diode will boost performance in hard switching conditions. Its high forward surge capability ensures good robustness during transient phases
No or negligible reverse recovery
Switching behavior independent of temperature
Dedicated to PFC applications
High forward surge capability
Operating Tj from -40 °C to 175 °C
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